X-ray Study on Lattice Defects in Ar<SUP>+</SUP> Ion Implanted Copper Whiskers
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چکیده
منابع مشابه
Extended defects of ion-implanted GaAs
Ion-implantation-induced extended defect formation and annealing processes have been studied in GaAs. Mg, Be, Si, Ge, and Sn ions were implanted between 40 and 185 keV over the dose range of 1 X 10t3-1 X 1015/cm2. Furnace annealing after capping with S&N4 was performed between 700 and 900 “C for times between 5 min and 10 h. Plan-view and crosssectional transmission electron microscopy results ...
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ژورنال
عنوان ژورنال: Journal of the Japan Institute of Metals and Materials
سال: 1979
ISSN: 0021-4876,1880-6880
DOI: 10.2320/jinstmet1952.43.8_689